|
DRUM >
Theses and Dissertations from UM >
UM Theses and Dissertations >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/1903/231
|
| Title: | Maskless Fabrication of Junction Field Effect Transistors via Focused Ion Beams |
| Authors: | De Marco, Anthony John |
| Advisors: | Melngailis, John |
| Department/Program: | Electrical Engineering |
| Type: | Dissertation |
| Keywords: | Engineering, Electronics and Electrical (0544) |
| Issue Date: | 14-Apr-2004 |
| Abstract: | Focused ion beam (FIB) techniques were used to construct junction field effect transistors (JFETs) on a mesa of n-type silicon on an SOI chip. The implantation and metal contacts were made by FIB, which suggests that this technique can be used to make transistors in a non-standard geometry, such as the tip of a scanning probe or on a MEMS structure. FIB dopant implantation was used to direct-write the source, gate, and drain regions of each device. The contact resistance of platinum grown on silicon by FIB-induced deposition was investigated, and found to be suitable for producing ohmic contacts to heavily doped silicon. Several proof-of-concept devices were made with FIB deposited platinum as contacts to demonstrate the technique's potential. Other devices were created with conventional aluminum contacts instead of FIB-platinum as a control set, to isolate and investigate the effect of variable gate doping on device characteristics. All devices were 90 μm by 90 &#95... |
| URI: | http://hdl.handle.net/1903/231 |
| Appears in Collections: | Electrical & Computer Engineering Theses and Dissertations
UM Theses and Dissertations
|
Files in This Item:
| File |
Description |
Size | Format | No. of Downloads |
|---|
| umi-umd-1337.pdf | | 12670Kb | Adobe PDF | 106 | View/Open |
|
Show full item record
All items in DRUM are protected by copyright, with all rights reserved.
|
