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http://hdl.handle.net/1903/3455
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| Title: | Plasma etching of dielectric materials using inductively and capacitively coupled fluorocarbon discharges: mechanistic studies of the surface chemistry |
| Authors: | Ling, Li |
| Advisors: | Oehrlein, Gottlieb S. |
| Department/Program: | Material Science and Engineering |
| Type: | Dissertation |
| Sponsors: | Digital Repository at the University of Maryland
University of Maryland (College Park, Md.) |
| Keywords: | Engineering, Materials Science (0794) |
| Issue Date: | 24-Apr-2006 |
| Abstract: | Fluorocarbon (FC) plasmas are commonly used for dielectric materials etching. Our initial work was performed using an inductively coupled plasma (ICP) system to produce FC discharges. We first examined the effect of CO addition to C<sub>4</sub>F<sub>8</sub> or C<sub>4</sub>F<sub>8</sub>/Ar plasmas for selective etching of organosilicate glass (OSG), which is a typical low k (LK) material over etch stop layers. The chemical activity of CO when added to either C<sub>4</sub>F<sub>8</sub> or C<sub>4</sub>F<sub>8</sub>/80%Ar can be understood in terms of the CO dissociation energy threshold relative to energies of inelastic electron collision processes of the dominant feedgas component. We also studied the plasma etching behavior of 193 nm and 248 nm photoresist in FC discharges used for dielectric etching. We showed that ion-enhanced selective volatilization of carbonyl groups of the 193 nm photoresist polymer backbone which is absent for the 248 nm material, along with modulation of the i... |
| URI: | http://hdl.handle.net/1903/3455 |
| Appears in Collections: | Materials Science & Engineering Theses and Dissertations
UM Theses and Dissertations
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| umi-umd-3279.pdf | | 2864Kb | Adobe PDF | 388 | View/Open |
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